FDZ3N513ZT
Item specifics
- Additional Feature ESD PROTECTION
- Continuous Drain Current (ID) 1.1A
- Current - Continuous Drain (Id) @ 25°C 1.1A Ta
- Drain to Source Breakdown Voltage 30V
- Drain-source On Resistance-Max 0.52Ohm
- Drive Voltage (Max Rds On,Min Rds On) 3.2V 4.5V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 2.7 ns
- Feedback Cap-Max (Crss) 25 pF
- FET Feature Schottky Diode (Body)
- FET Type N-Channel
- Forward Current 1.1A
- Gate Charge (Qg) (Max) @ Vgs 1nC @ 4.5V
- Gate to Source Voltage (Vgs) 5.5V
- Height 332μm
- Input Capacitance (Ciss) (Max) @ Vds 85pF @ 15V
- JESD-609 Code e1
- Length 1mm
- Lifecycle Status LAST SHIPMENTS (Last Updated: 3 days ago)
- Max Repetitive Reverse Voltage (Vrrm) 25V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 700 mV
- Number of Elements 1
- Number of Pins 4
- Number of Terminations 4
- Operating Mode DEPLETION MODE
- Operating Temperature -55°C~125°C TJ
- Package / Case 4-UFBGA, WLCSP
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reverse Current 300μA
- Power Dissipation 1W
- Power Dissipation-Max 1W Ta
- Published 2016
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 462m Ω @ 300mA, 4.5V
- REACH SVHC No SVHC
- Reverse Recovery Time 29 ns
- Rise Time 1.9ns
- RoHS Status RoHS Compliant
- Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form BALL
- Terminal Position BOTTOM
- Threshold Voltage 700mV
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 3.1 ns
- Turn-Off Delay Time 9.6 ns
- Vgs (Max) +5.5V, -0.3V
- Vgs(th) (Max) @ Id 1.5V @ 250μA
- Weight 42mg
- Width 1mm
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