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IPS031N03LGAKMA1
IPS031N03LGAKMA1

IPS031N03LGAKMA1

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Product Code: IPS031N03LGAKMA1
Availability: In Stock
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Price: $0.36
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Item specifics

  • Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
  • Avalanche Energy Rating (Eas) 60 mJ
  • Continuous Drain Current (ID) 90A
  • Drain to Source Breakdown Voltage 30V
  • Drain to Source Resistance 3.1mOhm
  • Drain to Source Voltage (Vdss) 30V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 5 ns
  • FET Technology METAL-OXIDE SEMICONDUCTOR
  • Gate to Source Voltage (Vgs) 20V
  • Halogen Free Halogen Free
  • Height 6.22mm
  • HTS Code 8541.29.00.95
  • Input Capacitance 4nF
  • JESD-609 Code e3
  • Length 6.73mm
  • Max Operating Temperature 175°C
  • Max Power Dissipation 94W
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Package / Case TO-251-3
  • Part Status Obsolete
  • Pbfree Code no
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Polarity/Channel Type N-CHANNEL
  • Power Dissipation 94W
  • Published 2008
  • Pulsed Drain Current-Max (IDM) 400A
  • Qualification Status Not Qualified
  • Rds On Max 3.1 mΩ
  • Rise Time 6ns
  • RoHS Status RoHS Compliant
  • Terminal Finish Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Turn On Delay Time 9 ns
  • Turn-Off Delay Time 34 ns
  • Width 2.39mm

Product Description

Infineon Technologies

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