IRF640

IRF640

Product Code: IRF640
Availability: In Stock
Viewed 5 times
Price: $1.93
0 sold. Only 14416 remain

Item specifics

  • Avalanche Energy Rating (Eas) 280 mJ
  • Base Part Number IRF6
  • Continuous Drain Current (ID) 18A
  • Current - Continuous Drain (Id) @ 25°C 18A Tc
  • Current Rating 18A
  • Drain to Source Breakdown Voltage 200V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 25 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 1560pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-609 Code e3
  • Lead Free Contains Lead
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Obsolete
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Power Dissipation 125W
  • Power Dissipation-Max 125W Tc
  • Pulsed Drain Current-Max (IDM) 72A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 180m Ω @ 9A, 10V
  • Reach Compliance Code not_compliant
  • Rise Time 27ns
  • RoHS Status ROHS3 Compliant
  • Series MESH OVERLAY™
  • Terminal Finish Matte Tin (Sn)
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Voltage - Rated DC 200V

Product Description

STMicroelectronics

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