STB270N4F3
Item specifics
- Base Part Number STB270N
- Case Connection DRAIN
- Continuous Drain Current (ID) 160A
- Current - Continuous Drain (Id) @ 25°C 160A Tc
- Drain to Source Breakdown Voltage 40V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 45 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Lifecycle Status ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 245
- Pin Count 4
- Power Dissipation 330W
- Power Dissipation-Max 330W Tc
- Pulsed Drain Current-Max (IDM) 640A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 2.5m Ω @ 80A, 10V
- Resistance 2MOhm
- Rise Time 180ns
- RoHS Status ROHS3 Compliant
- Series Automotive, AEC-Q101, STripFET™ III
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 22 ns
- Turn-Off Delay Time 110 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
Product Description
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