FDI150N10

FDI150N10

Product Code: FDI150N10
Availability: In Stock
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Price: $12.65
0 sold. Only 6628 remain

Item specifics

  • Continuous Drain Current (ID) 57A
  • Current - Continuous Drain (Id) @ 25°C 57A Tc
  • Drain to Source Breakdown Voltage 100V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 83 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 4760pF @ 25V
  • JESD-30 Code R-PSIP-T3
  • Lifecycle Status ACTIVE (Last Updated: 3 days ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
  • Packaging Tube
  • Part Status Active
  • Pbfree Code yes
  • Power Dissipation 110W
  • Power Dissipation-Max 110W Tc
  • Published 2013
  • Pulsed Drain Current-Max (IDM) 228A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 16m Ω @ 49A, 10V
  • Rise Time 164ns
  • RoHS Status ROHS3 Compliant
  • Series PowerTrench®
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 47 ns
  • Turn-Off Delay Time 86 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4.5V @ 250μA
  • Weight 2.084g

Product Description

ON Semiconductor

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