STD60NF55LAT4
Item specifics
- Additional Feature LOW THRESHOLD
- Avalanche Energy Rating (Eas) 400 mJ
- Base Part Number STD60N
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 60A
- Current - Continuous Drain (Id) @ 25°C 60A Tc
- Drain to Source Voltage (Vdss) 55V
- Drive Voltage (Max Rds On,Min Rds On) 5V 10V
- DS Breakdown Voltage-Min 55V
- ECCN Code EAR99
- Fall Time (Typ) 35 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
- Gate to Source Voltage (Vgs) 15V
- Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lifecycle Status ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 110W
- Power Dissipation-Max 110W Tc
- Pulsed Drain Current-Max (IDM) 240A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 15m Ω @ 30A, 10V
- Rise Time 180ns
- RoHS Status ROHS3 Compliant
- Series Automotive, AEC-Q101, SuperFET® II
- Terminal Finish Matte Tin (Sn) - annealed
- Terminal Form GULL WING
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 30 ns
- Turn-Off Delay Time 80 ns
- Vgs (Max) ±15V
- Vgs(th) (Max) @ Id 2V @ 250μA
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