RF4C100BCTCR

RF4C100BCTCR

Product Code: RF4C100BCTCR
Availability: In Stock
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Price: $0.20 $5.53 -96%
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Item specifics

  • Avalanche Energy Rating (Eas) 15.2 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 10A Ta
  • Drain Current-Max (Abs) (ID) 10A
  • Drain to Source Voltage (Vdss) 20V
  • Drain-source On Resistance-Max 0.02Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
  • DS Breakdown Voltage-Min 20V
  • ECCN Code EAR99
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 23.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 10V
  • JESD-30 Code S-PDSO-N6
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 6
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case 8-PowerUDFN
  • Packaging Cut Tape (CT)
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 2W Ta
  • Pulsed Drain Current-Max (IDM) 36A
  • Rds On (Max) @ Id, Vgs 15.6m Ω @ 10A, 4.5V
  • Reach Compliance Code not_compliant
  • RoHS Status ROHS3 Compliant
  • Surface Mount YES
  • Terminal Form NO LEAD
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±8V
  • Vgs(th) (Max) @ Id 1.2V @ 1mA

Product Description

ROHM Semiconductor

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