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SIHP20N50E-GE3
SIHP20N50E-GE3

SIHP20N50E-GE3

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Product Code: SIHP20N50E-GE3
Availability: In Stock
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Price: $13.40 $14.02 -4%
0 sold. Only 1640 remain

Item specifics

  • Avalanche Energy Rating (Eas) 204 mJ
  • Continuous Drain Current (ID) 19A
  • Current - Continuous Drain (Id) @ 25°C 19A Tc
  • Drain to Source Voltage (Vdss) 500V
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 500V
  • Element Configuration Single
  • Fall Time (Typ) 25 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 100V
  • JEDEC-95 Code TO-220AB
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation-Max 179W Tc
  • Published 2001
  • Pulsed Drain Current-Max (IDM) 42A
  • Rds On (Max) @ Id, Vgs 184m Ω @ 10A, 10V
  • REACH SVHC Unknown
  • Rise Time 27ns
  • RoHS Status ROHS3 Compliant
  • Threshold Voltage 4V
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 17 ns
  • Turn-Off Delay Time 48 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

Vishay Siliconix

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