BSO119N03S
Item specifics
- Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 9A
- Current - Continuous Drain (Id) @ 25°C 9A Ta
- Current Rating 9A
- Drain Current-Max (Abs) (ID) 9A
- Drain to Source Breakdown Voltage 30V
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- Dual Supply Voltage 30V
- ECCN Code EAR99
- Fall Time (Typ) 3.8 ns
- Feedback Cap-Max (Crss) 93 pF
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 13nC @ 5V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 15V
- JEDEC-95 Code MS-012AA
- JESD-609 Code e3
- Lead Free Lead Free
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 1.6 V
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 1.56W
- Power Dissipation-Max 1.56W Ta
- Published 2006
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 11.9m Ω @ 11A, 10V
- REACH SVHC No SVHC
- Resistance 16.3mOhm
- Rise Time 3.8ns
- RoHS Status RoHS Compliant
- Series OptiMOS™
- Terminal Finish MATTE TIN
- Terminal Form GULL WING
- Terminal Position DUAL
- Termination SMD/SMT
- Threshold Voltage 1.6V
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 18 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2V @ 25μA
- Voltage - Rated DC 30V
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