FDFM2N111
Item specifics
- Collector Emitter Breakdown Voltage 2V
- Continuous Drain Current (ID) 4A
- Current - Continuous Drain (Id) @ 25°C 4A Ta
- Current Rating 4A
- Drain Current-Max (Abs) (ID) 4A
- Drain to Source Breakdown Voltage 20V
- Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 7 ns
- FET Feature Schottky Diode (Isolated)
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 3.8nC @ 4.5V
- Gate to Source Voltage (Vgs) 12V
- Height 750μm
- Input Capacitance (Ciss) (Max) @ Vds 273pF @ 10V
- JESD-609 Code e4
- Lead Free Lead Free
- Length 3mm
- Lifecycle Status ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 6
- Number of Terminations 6
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 6-WDFN Exposed Pad
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Power Dissipation 1.7W
- Power Dissipation-Max 1.7W Ta
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 100m Ω @ 4A, 4.5V
- Rise Time 7ns
- RoHS Status ROHS3 Compliant
- Series PowerTrench®
- Terminal Finish Nickel/Palladium (Ni/Pd)
- Terminal Position DUAL
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 6 ns
- Turn-Off Delay Time 11 ns
- Vgs (Max) ±12V
- Vgs(th) (Max) @ Id 1.5V @ 250μA
- Voltage - Rated DC 20V
- Weight 165.33333mg
- Width 3mm
Product Description
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