AUIRFR5505
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY
- Case Connection DRAIN
- Contact Plating Tin
- Continuous Drain Current (ID) 18A
- Current - Continuous Drain (Id) @ 25°C 18A Tc
- Drain to Source Breakdown Voltage -55V
- Drain to Source Voltage (Vdss) 55V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 16 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 2.39mm
- Input Capacitance (Ciss) (Max) @ Vds 650pF @ 25V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Length 6.73mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tube
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 57W
- Power Dissipation-Max 57W Tc
- Published 2010
- Pulsed Drain Current-Max (IDM) 64A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 110m Ω @ 9.6A, 10V
- REACH SVHC No SVHC
- Rise Time 28ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Form GULL WING
- Threshold Voltage -2V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 12 ns
- Turn-Off Delay Time 20 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Width 6.22mm
Product Description
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