CSD17570Q5BT
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 450 mJ
- Base Part Number CSD17570
- Case Connection DRAIN
- Contact Plating Gold
- Continuous Drain Current (ID) 53A
- Current - Continuous Drain (Id) @ 25°C 100A Ta
- Drain to Source Voltage (Vdss) 30V
- Drain-source On Resistance-Max 0.00092Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- DS Breakdown Voltage-Min 30V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 44 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 121nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 15V
- JESD-609 Code e3
- Lead Free Contains Lead
- Length 5mm
- Lifecycle Status ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-PowerTDFN
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Power Dissipation-Max 3.2W Ta
- Pulsed Drain Current-Max (IDM) 360A
- Rds On (Max) @ Id, Vgs 0.69m Ω @ 50A, 10V
- Reach Compliance Code not_compliant
- Rise Time 36ns
- RoHS Status ROHS3 Compliant
- Series NexFET™
- Terminal Finish Matte Tin (Sn)
- Terminal Form NO LEAD
- Terminal Position DUAL
- Thickness 950μm
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Element Material SILICON
- Turn On Delay Time 5 ns
- Turn-Off Delay Time 144 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 1.9V @ 250μA
- Width 6mm
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