IRF6641TR1PBF
Item specifics
- Continuous Drain Current (ID) 3.7A
- Current - Continuous Drain (Id) @ 25°C 4.6A Ta 26A Tc
- Current Rating 4.6A
- Drain to Source Breakdown Voltage 200V
- Drain to Source Resistance 59.9mOhm
- Drain to Source Voltage (Vdss) 200V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 200V
- Element Configuration Single
- Fall Time (Typ) 6.5 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 506μm
- Input Capacitance 2.29nF
- Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
- Lead Free Lead Free
- Length 6.35mm
- Max Operating Temperature 150°C
- Min Operating Temperature -40°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 4 V
- Number of Elements 1
- Number of Pins 5
- Operating Temperature -40°C~150°C TJ
- Package / Case DirectFET™ Isometric MZ
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Power Dissipation 89W
- Power Dissipation-Max 2.8W Ta 89W Tc
- Published 2007
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 59.9mOhm @ 5.5A, 10V
- Rds On Max 59.9 mΩ
- REACH SVHC No SVHC
- Recovery Time 130 ns
- Rise Time 11ns
- RoHS Status RoHS Compliant
- Series HEXFET®
- Supplier Device Package DIRECTFET™ MZ
- Termination SMD/SMT
- Threshold Voltage 4V
- Turn On Delay Time 16 ns
- Turn-Off Delay Time 31 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4.9V @ 150μA
- Voltage - Rated DC 200V
- Width 5.05mm
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