IRF6629TR1PBF

IRF6629TR1PBF

Product Code: IRF6629TR1PBF
Availability: In Stock
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Price: $9.32
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Item specifics

  • Continuous Drain Current (ID) 23A
  • Current - Continuous Drain (Id) @ 25°C 29A Ta 180A Tc
  • Current Rating 29A
  • Drain to Source Breakdown Voltage 25V
  • Drain to Source Resistance 2.7mOhm
  • Drain to Source Voltage (Vdss) 25V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • Dual Supply Voltage 25V
  • Fall Time (Typ) 7.4 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
  • Gate to Source Voltage (Vgs) 20V
  • Height 506μm
  • Input Capacitance 4.26nF
  • Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
  • Lead Free Lead Free
  • Max Operating Temperature 150°C
  • Min Operating Temperature -40°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs 1.8 V
  • Number of Pins 5
  • Operating Temperature -40°C~150°C TJ
  • Package / Case DirectFET™ Isometric MX
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Power Dissipation 100W
  • Power Dissipation-Max 2.8W Ta 100W Tc
  • Published 2006
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V
  • Rds On Max 2.1 mΩ
  • REACH SVHC No SVHC
  • Resistance 2.1MOhm
  • Rise Time 67ns
  • RoHS Status RoHS Compliant
  • Series HEXFET®
  • Supplier Device Package DIRECTFET™ MX
  • Termination SMD/SMT
  • Threshold Voltage 1.8V
  • Turn On Delay Time 20 ns
  • Turn-Off Delay Time 20 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.35V @ 100μA
  • Voltage - Rated DC 25V
  • Width 5.05mm

Product Description

Infineon Technologies

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