STW60NM50N

STW60NM50N

Product Code: STW60NM50N
Availability: In Stock
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Price: $15.05
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Item specifics

  • Avalanche Energy Rating (Eas) 551 mJ
  • Base Part Number STW60N
  • Continuous Drain Current (ID) 68A
  • Current - Continuous Drain (Id) @ 25°C 68A Tc
  • Drain to Source Breakdown Voltage 500V
  • Drain-source On Resistance-Max 0.043Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 27.5 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V
  • Gate to Source Voltage (Vgs) 25V
  • Input Capacitance (Ciss) (Max) @ Vds 5790pF @ 100V
  • JESD-30 Code R-PSFM-T3
  • Lead Free Lead Free
  • Lifecycle Status NRND (Last Updated: 8 months ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-247-3
  • Packaging Tube
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Power Dissipation 446W
  • Power Dissipation-Max 446W Tc
  • Pulsed Drain Current-Max (IDM) 272A
  • Rds On (Max) @ Id, Vgs 43m Ω @ 34A, 10V
  • Rise Time 36ns
  • RoHS Status ROHS3 Compliant
  • Series MDmesh™ II
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn-Off Delay Time 40 ns
  • Vgs (Max) ±25V
  • Vgs(th) (Max) @ Id 4V @ 250μA

Product Description

STMicroelectronics

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