STS2DPFS20V
Item specifics
- Base Part Number STS2D
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 2.5A
- Current - Continuous Drain (Id) @ 25°C 2.5A Tc
- Current Rating -2.5A
- Drain Current-Max (Abs) (ID) 2A
- Drain to Source Breakdown Voltage -20V
- Drain to Source Voltage (Vdss) 20V
- Drain-source On Resistance-Max 0.25Ohm
- Drive Voltage (Max Rds On,Min Rds On) 2.7V 4.5V
- ECCN Code EAR99
- Fall Time (Typ) 11 ns
- FET Feature Schottky Diode (Isolated)
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 4.5V
- Gate to Source Voltage (Vgs) 12V
- Input Capacitance (Ciss) (Max) @ Vds 315pF @ 15V
- JESD-609 Code e4
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature 150°C TJ
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 2W
- Power Dissipation-Max 2W Tc
- Pulsed Drain Current-Max (IDM) 10A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 200m Ω @ 1A, 4.5V
- Rise Time 30ns
- RoHS Status ROHS3 Compliant
- Series STripFET™ II
- Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 45 ns
- Vgs (Max) ±12V
- Vgs(th) (Max) @ Id 600mV @ 250μA
- Voltage - Rated DC -20V
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