SQ3419EEV-T1-GE3

SQ3419EEV-T1-GE3

Product Code: SQ3419EEV-T1-GE3
Availability: In Stock
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Price: $1.79 $17.86 -90%
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Item specifics

  • Continuous Drain Current (ID) 7.4A
  • Current - Continuous Drain (Id) @ 25°C 7.4A Tc
  • Drain to Source Breakdown Voltage -40V
  • Drain to Source Voltage (Vdss) 40V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 10 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
  • Gate to Source Voltage (Vgs) 12V
  • Input Capacitance (Ciss) (Max) @ Vds 1065pF @ 20V
  • Lead Free Lead Free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 6
  • Number of Terminations 6
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case SOT-23-6 Thin, TSOT-23-6
  • Packaging Digi-Reel®
  • Part Status Obsolete
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 6
  • Power Dissipation 5W
  • Power Dissipation-Max 5W Tc
  • Published 2013
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 50m Ω @ 2.5A, 10V
  • REACH SVHC Unknown
  • Resistance 78mOhm
  • Rise Time 8ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Threshold Voltage -1.5V
  • Time@Peak Reflow Temperature-Max (s) 40
  • Transistor Element Material SILICON
  • Turn On Delay Time 9 ns
  • Turn-Off Delay Time 26 ns
  • Vgs (Max) ±12V
  • Vgs(th) (Max) @ Id 2.5V @ 250μA
  • Weight 19.986414mg

Product Description

Vishay Siliconix

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