NVTFS4C06NTWG

NVTFS4C06NTWG

Product Code: NVTFS4C06NTWG
Availability: In Stock
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Price: $18.33
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Item specifics

  • Avalanche Energy Rating (Eas) 34 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 21A
  • Current - Continuous Drain (Id) @ 25°C 21A Ta
  • Drain to Source Voltage (Vdss) 30V
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • DS Breakdown Voltage-Min 30V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1683pF @ 15V
  • JESD-30 Code S-PDSO-F5
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Lifecycle Status ACTIVE (Last Updated: 1 week ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 8
  • Number of Terminations 5
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case 8-PowerWDFN
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code yes
  • Power Dissipation-Max 3.1W Ta 37W Tc
  • Published 2014
  • Pulsed Drain Current-Max (IDM) 367A
  • Rds On (Max) @ Id, Vgs 4.2m Ω @ 30A, 10V
  • Reach Compliance Code not_compliant
  • RoHS Status ROHS3 Compliant
  • Terminal Finish Tin (Sn)
  • Terminal Form FLAT
  • Terminal Position DUAL
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.2V @ 250μA

Product Description

ON Semiconductor

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