IPB80N06S2LH5ATMA4

IPB80N06S2LH5ATMA4

Product Code: IPB80N06S2LH5ATMA4
Availability: In Stock
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Price: $17.70
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Item specifics

  • Avalanche Energy Rating (Eas) 700 mJ
  • Case Connection DRAIN
  • Continuous Drain Current (ID) 80A
  • Current - Continuous Drain (Id) @ 25°C 80A Tc
  • Drain to Source Breakdown Voltage 55V
  • Drain-source On Resistance-Max 0.0062Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 22 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Halogen Free Halogen Free
  • Height 4.4mm
  • Input Capacitance (Ciss) (Max) @ Vds 5000pF @ 25V
  • JESD-30 Code R-PSSO-G2
  • JESD-609 Code e3
  • Length 10mm
  • Max Dual Supply Voltage 55V
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Pbfree Code yes
  • Power Dissipation 300W
  • Power Dissipation-Max 300W Tc
  • Published 2006
  • Rds On (Max) @ Id, Vgs 4.7m Ω @ 80A, 10V
  • Reach Compliance Code not_compliant
  • Reference Standard AEC-Q101
  • Rise Time 23ns
  • RoHS Status ROHS3 Compliant
  • Series OptiMOS™
  • Terminal Finish Tin (Sn)
  • Terminal Form GULL WING
  • Transistor Element Material SILICON
  • Turn On Delay Time 19 ns
  • Turn-Off Delay Time 75 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2V @ 250μA
  • Width 9.25mm

Product Description

Infineon Technologies

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