SI4620DY-T1-E3
Item specifics
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 7.4A
- Current - Continuous Drain (Id) @ 25°C 6A Ta 7.5A Tc
- Drain Current-Max (Abs) (ID) 6A
- Drain to Source Breakdown Voltage 30V
- Drain-source On Resistance-Max 0.035Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Fall Time (Typ) 17 ns
- FET Feature Schottky Diode (Isolated)
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 1.5mm
- Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 15V
- JESD-609 Code e3
- Length 5mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 2W
- Power Dissipation-Max 2W Ta 3.1W Tc
- Published 2012
- Pulsed Drain Current-Max (IDM) 40A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 35m Ω @ 6A, 10V
- Rise Time 36ns
- RoHS Status ROHS3 Compliant
- Series LITTLE FOOT®
- Terminal Finish MATTE TIN
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 16 ns
- Turn-Off Delay Time 21 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 250μA
- Weight 186.993455mg
- Width 4mm
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