SI7615DN-T1-GE3
Item specifics
- Avalanche Energy Rating (Eas) 20 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) -35A
- Current - Continuous Drain (Id) @ 25°C 35A Tc
- Drain Current-Max (Abs) (ID) 22.6A
- Drain to Source Breakdown Voltage -20V
- Drain to Source Voltage (Vdss) 20V
- Drive Voltage (Max Rds On,Min Rds On) 6V 10V
- ECCN Code EAR99
- Fall Time (Typ) 28 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 183nC @ 10V
- Gate to Source Voltage (Vgs) 12V
- Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 10V
- JESD-30 Code S-XDSO-C5
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.3mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 8
- Number of Terminations 5
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case PowerPAK® 1212-8
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 3.7W
- Power Dissipation-Max 3.7W Ta 52W Tc
- Published 2011
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 3.9m Ω @ 20A, 10V
- Resistance 3.9MOhm
- Rise Time 38ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Finish Matte Tin (Sn)
- Terminal Form C BEND
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 35 ns
- Turn-Off Delay Time 80 ns
- Vgs (Max) ±12V
- Vgs(th) (Max) @ Id 1.5V @ 250μA
- Width 3.3mm
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