PSMN4R4-80BS,118

PSMN4R4-80BS,118

Product Code: PSMN4R4-80BS,118
Availability: In Stock
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Price: $5.36 $9.79 -45%
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Item specifics

  • Case Connection DRAIN
  • Continuous Drain Current (ID) 100A
  • Current - Continuous Drain (Id) @ 25°C 100A Tc
  • Drain to Source Breakdown Voltage 80V
  • Drain-source On Resistance-Max 0.0045Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Element Configuration Single
  • Fall Time (Typ) 18.4 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 125nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 40V
  • JESD-30 Code R-PSSO-G2
  • JESD-609 Code e3
  • Max Dual Supply Voltage 80V
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 2
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pin Count 3
  • Power Dissipation 306W
  • Power Dissipation-Max 306W Tc
  • Published 2011
  • Pulsed Drain Current-Max (IDM) 680A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 4.5m Ω @ 25A, 10V
  • Rise Time 38.1ns
  • RoHS Status ROHS3 Compliant
  • Surface Mount YES
  • Terminal Finish Tin (Sn)
  • Terminal Form GULL WING
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 34.7 ns
  • Turn-Off Delay Time 66 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 1mA

Product Description

Nexperia USA Inc.

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