IRF6609
Item specifics
- Additional Feature LOW CONDUCTION LOSS
- Avalanche Energy Rating (Eas) 240 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 150A
- Current - Continuous Drain (Id) @ 25°C 31A Ta 150A Tc
- Current Rating 31A
- Drain to Source Breakdown Voltage 20V
- Drain-source On Resistance-Max 0.002Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Fall Time (Typ) 9.8 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 69nC @ 4.5V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 6290pF @ 10V
- JESD-30 Code R-XBCC-N3
- JESD-609 Code e1
- Lead Free Lead Free
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 7
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -40°C~150°C TJ
- Package / Case DirectFET™ Isometric MT
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 89W
- Power Dissipation-Max 1.8W Ta 89W Tc
- Published 2005
- Pulsed Drain Current-Max (IDM) 250A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 2m Ω @ 31A, 10V
- Rise Time 95ns
- RoHS Status Non-RoHS Compliant
- Series HEXFET®
- Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Form NO LEAD
- Terminal Position BOTTOM
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 26 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.45V @ 250μA
- Voltage - Rated DC 20V
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