STP12NK60Z
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY
- Avalanche Energy Rating (Eas) 260 mJ
- Base Part Number STP12
- Continuous Drain Current (ID) 10A
- Current - Continuous Drain (Id) @ 25°C 10A Tc
- Current Rating 10A
- Drain to Source Breakdown Voltage 600V
- Drain-source On Resistance-Max 0.64Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 600V
- Element Configuration Single
- Fall Time (Typ) 31.5 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Lead Free
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs 3.75 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature 150°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Obsolete
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Power Dissipation 150W
- Power Dissipation-Max 150W Tc
- Pulsed Drain Current-Max (IDM) 40A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 640m Ω @ 5A, 10V
- Reach Compliance Code not_compliant
- REACH SVHC No SVHC
- Rise Time 18.5ns
- RoHS Status ROHS3 Compliant
- Series SuperMESH™
- Terminal Finish Tin (Sn)
- Termination Through Hole
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 55 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 4.5V @ 100μA
- Voltage - Rated DC 600V
Product Description
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