3LN01C-TB-E

3LN01C-TB-E

Product Code: 3LN01C-TB-E
Availability: In Stock
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Price: $13.41
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Item specifics

  • Continuous Drain Current (ID) 150mA
  • Current - Continuous Drain (Id) @ 25°C 150mA Ta
  • Drain Current-Max (Abs) (ID) 0.15A
  • Drain to Source Voltage (Vdss) 30V
  • Drive Voltage (Max Rds On,Min Rds On) 1.5V 4V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 120 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V
  • Gate to Source Voltage (Vgs) 10V
  • Height 1.1mm
  • HTS Code 8541.21.00.95
  • Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V
  • JESD-609 Code e6
  • Lead Free Lead Free
  • Length 2.9mm
  • Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Pins 3
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) 260
  • Pin Count 3
  • Power Dissipation 250mW
  • Power Dissipation-Max 250mW Ta
  • Published 2006
  • Rds On (Max) @ Id, Vgs 3.7 Ω @ 80mA, 4V
  • Rise Time 65ns
  • RoHS Status RoHS Compliant
  • Surface Mount YES
  • Terminal Finish Tin/Bismuth (Sn/Bi)
  • Terminal Form GULL WING
  • Terminal Position DUAL
  • Time@Peak Reflow Temperature-Max (s) 40
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 19 ns
  • Turn-Off Delay Time 155 ns
  • Vgs (Max) ±10V
  • Width 1.5mm

Product Description

ON Semiconductor

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