STB80PF55T4
Item specifics
- Base Part Number STB80P
- Case Connection DRAIN
- Continuous Drain Current (ID) 40A
- Current - Continuous Drain (Id) @ 25°C 80A Tc
- Current Rating -300mA
- Drain Current-Max (Abs) (ID) 80A
- Drain to Source Breakdown Voltage -55V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage 55V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 80 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 258nC @ 10V
- Gate to Source Voltage (Vgs) 16V
- Height 4.6mm
- Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 10.4mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 3 V
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 245
- Pin Count 4
- Power Dissipation 300W
- Power Dissipation-Max 300W Tc
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 18m Ω @ 40A, 10V
- REACH SVHC No SVHC
- Resistance 18mOhm
- Rise Time 190ns
- RoHS Status ROHS3 Compliant
- Series STripFET™ II
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Termination SMD/SMT
- Threshold Voltage 3V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 35 ns
- Turn-Off Delay Time 165 ns
- Vgs (Max) ±16V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC -60V
- Width 9.35mm
Product Description
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