SUM52N20-39P-E3
Item specifics
- Continuous Drain Current (ID) 52A
- Current - Continuous Drain (Id) @ 25°C 52A Tc
- Drain to Source Breakdown Voltage 200V
- Drain-source On Resistance-Max 0.094Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V 15V
- Dual Supply Voltage 200V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 9 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 185nC @ 15V
- Gate to Source Voltage (Vgs) 25V
- Height 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds 4220pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Length 10.41mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs 4.5 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Pin Count 4
- Power Dissipation-Max 3.12W Ta 250W Tc
- Published 2009
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 38m Ω @ 20A, 15V
- REACH SVHC No SVHC
- Reverse Recovery Time 133 ns
- Rise Time 170ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Terminal Form GULL WING
- Termination SMD/SMT
- Threshold Voltage 4.5V
- Transistor Element Material SILICON
- Turn On Delay Time 18 ns
- Turn-Off Delay Time 34 ns
- Vgs (Max) ±25V
- Vgs(th) (Max) @ Id 4.5V @ 250μA
- Weight 1.437803g
- Width 9.65mm
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