SI1065X-T1-E3

SI1065X-T1-E3

Product Code: SI1065X-T1-E3
Availability: In Stock
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Price: $1.96 $4.04 -51%
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Item specifics

  • Continuous Drain Current (ID) 1.18A
  • Drain to Source Breakdown Voltage -12V
  • Drain to Source Resistance 204mOhm
  • Drain to Source Voltage (Vdss) 12V
  • Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
  • Element Configuration Single
  • Fall Time (Typ) 27 ns
  • FET Type P-Channel
  • Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 5V
  • Gate to Source Voltage (Vgs) 8V
  • Height 600μm
  • Input Capacitance 480pF
  • Input Capacitance (Ciss) (Max) @ Vds 480pF @ 6V
  • Lead Free Lead Free
  • Length 1.7mm
  • Max Operating Temperature 150°C
  • Min Operating Temperature -55°C
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Pins 6
  • Operating Temperature -55°C~150°C TJ
  • Package / Case SOT-563, SOT-666
  • Packaging Tape & Reel (TR)
  • Part Status Obsolete
  • Power Dissipation 236mW
  • Power Dissipation-Max 236mW Ta
  • Published 2009
  • Rds On (Max) @ Id, Vgs 156mOhm @ 1.18A, 4.5V
  • Rds On Max 156 mΩ
  • Resistance 130MOhm
  • Rise Time 27ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Supplier Device Package SC-89-6
  • Turn On Delay Time 13 ns
  • Turn-Off Delay Time 45 ns
  • Vgs (Max) ±8V
  • Vgs(th) (Max) @ Id 950mV @ 250μA
  • Weight 32.006612mg
  • Width 1.2mm

Product Description

Vishay Siliconix

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