IPU60R1K4C6BKMA1
Item specifics
- Avalanche Energy Rating (Eas) 26 mJ
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 3.2A
- Current - Continuous Drain (Id) @ 25°C 3.2A Tc
- Drain to Source Breakdown Voltage 650V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Fall Time (Typ) 20 ns
- FET Feature Super Junction
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
- JESD-30 Code R-PSIP-T3
- JESD-609 Code e3
- Max Dual Supply Voltage 600V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Number of Elements 1
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~155°C TJ
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Packaging Tube
- Part Status Discontinued
- Pbfree Code no
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Power Dissipation 28.4W
- Power Dissipation-Max 28.4W Tc
- Published 2008
- Pulsed Drain Current-Max (IDM) 8A
- Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.1A, 10V
- Reach Compliance Code not_compliant
- Rise Time 7ns
- RoHS Status Non-RoHS Compliant
- Series CoolMOS™
- Terminal Finish Tin (Sn)
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 40 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.5V @ 90μA
Product Description
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