NTMSD6N303R2SG
Item specifics
- Avalanche Energy Rating (Eas) 325 mJ
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 6A
- Current - Continuous Drain (Id) @ 25°C 6A Ta
- Current Rating 6A
- Drain Current-Max (Abs) (ID) 6A
- Drain to Source Breakdown Voltage 30V
- Drain-source On Resistance-Max 0.032Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Fall Time (Typ) 34 ns
- FET Feature Schottky Diode (Isolated)
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
- JESD-30 Code R-PDSO-G8
- JESD-609 Code e3
- Lead Free Lead Free
- Max Operating Temperature 150°C
- Min Operating Temperature -55°C
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Terminations 8
- Operating Mode ENHANCEMENT MODE
- Package / Case 8-SOIC (0.154, 3.90mm Width)
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 8
- Power Dissipation 2W
- Power Dissipation-Max 2W Ta
- Published 2006
- Pulsed Drain Current-Max (IDM) 30A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 32m Ω @ 6A, 10V
- Rise Time 27ns
- RoHS Status RoHS Compliant
- Series FETKY™
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) 40
- Transistor Application SWITCHING
- Turn-Off Delay Time 22 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2.5V @ 250μA
- Voltage - Rated DC -30V
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