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SPI10N10
SPI10N10

SPI10N10

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Product Code: SPI10N10
Availability: In Stock
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Price: $14.93
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Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 60 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 10.3A
  • Current - Continuous Drain (Id) @ 25°C 10.3A Tc
  • Current Rating 10.3A
  • Drain-source On Resistance-Max 0.17Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 19.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 426pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
  • Packaging Tube
  • Part Status Discontinued
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Power Dissipation-Max 50W Tc
  • Published 2001
  • Pulsed Drain Current-Max (IDM) 41.2A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 170m Ω @ 7.8A, 10V
  • RoHS Status ROHS3 Compliant
  • Series SIPMOS®
  • Terminal Finish Matte Tin (Sn)
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 21μA
  • Voltage - Rated DC 100V

Product Description

Infineon Technologies

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