PSMN4R2-30MLDX

PSMN4R2-30MLDX

Product Code: PSMN4R2-30MLDX
Availability: In Stock
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Price: $0.92 $16.04 -94%
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Item specifics

  • Avalanche Energy Rating (Eas) 59 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 70A
  • Current - Continuous Drain (Id) @ 25°C 70A Tc
  • Drain to Source Breakdown Voltage 30V
  • Drain-source On Resistance-Max 0.0057Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
  • Fall Time (Typ) 8.7 ns
  • FET Feature Schottky Diode (Body)
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 29.3nC @ 10V
  • Gate to Source Voltage (Vgs) 2.2V
  • Input Capacitance (Ciss) (Max) @ Vds 1795pF @ 15V
  • JESD-30 Code R-PSSO-G4
  • Max Dual Supply Voltage 30V
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 8
  • Number of Terminations 4
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case SOT-1210, 8-LFPAK33
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pin Count 8
  • Power Dissipation-Max 65W Tc
  • Published 2015
  • Pulsed Drain Current-Max (IDM) 366A
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 4.3m Ω @ 25A, 10V
  • Rise Time 18.5ns
  • RoHS Status ROHS3 Compliant
  • Surface Mount YES
  • Terminal Form GULL WING
  • Terminal Position SINGLE
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 10.1 ns
  • Turn-Off Delay Time 12 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 2.2V @ 1mA

Product Description

Nexperia USA Inc.

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