STI18N60M2
Item specifics
- Avalanche Energy Rating (Eas) 135 mJ
- Base Part Number STI18N
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Drain Current-Max (Abs) (ID) 13A
- Drain-source On Resistance-Max 0.28Ohm
- DS Breakdown Voltage-Min 600V
- FET Technology METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code R-PSIP-T3
- Lifecycle Status ACTIVE (Last Updated: 7 months ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Number of Elements 1
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Part Status Active
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Polarity/Channel Type N-CHANNEL
- Pulsed Drain Current-Max (IDM) 52A
- RoHS Status ROHS3 Compliant
- Surface Mount NO
- Terminal Form THROUGH-HOLE
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
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