STB16NS25T4
Item specifics
- Avalanche Energy Rating (Eas) 200 mJ
- Base Part Number STB16N
- Continuous Drain Current (ID) 16A
- Current - Continuous Drain (Id) @ 25°C 16A Tc
- Current Rating 16A
- Drain to Source Breakdown Voltage 250V
- Drain-source On Resistance-Max 0.28Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 30 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 80nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 1270pF @ 25V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature 175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Peak Reflow Temperature (Cel) 245
- Pin Count 3
- Power Dissipation 140W
- Power Dissipation-Max 140W Tc
- Pulsed Drain Current-Max (IDM) 64A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 280m Ω @ 8A, 10V
- Reach Compliance Code not_compliant
- Rise Time 25ns
- RoHS Status ROHS3 Compliant
- Series MESH OVERLAY™
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn-Off Delay Time 75 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC 250V
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