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NTP52N10
NTP52N10

NTP52N10

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Product Code: NTP52N10
Availability: In Stock
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Price: $0.47
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Item specifics

  • Avalanche Energy Rating (Eas) 800 mJ
  • Case Connection DRAIN
  • Continuous Drain Current (ID) 60A
  • Current - Continuous Drain (Id) @ 25°C 60A Ta
  • Current Rating 52A
  • Drain to Source Breakdown Voltage 100V
  • Drain-source On Resistance-Max 0.03Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • Element Configuration Single
  • Fall Time (Typ) 100 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V
  • Gate to Source Voltage (Vgs) 20V
  • HTS Code 8541.29.00.95
  • Input Capacitance (Ciss) (Max) @ Vds 3150pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • JESD-609 Code e0
  • Lead Free Contains Lead
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-220-3
  • Packaging Tube
  • Part Status Obsolete
  • Peak Reflow Temperature (Cel) 240
  • Pin Count 3
  • Power Dissipation 214W
  • Power Dissipation-Max 214W Tc
  • Published 2006
  • Pulsed Drain Current-Max (IDM) 156A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 30m Ω @ 26A, 10V
  • Reach Compliance Code not_compliant
  • Rise Time 95ns
  • RoHS Status Non-RoHS Compliant
  • Terminal Finish Tin/Lead (Sn80Pb20)
  • Time@Peak Reflow Temperature-Max (s) 30
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn-Off Delay Time 74 ns
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 250μA
  • Voltage - Rated DC 100V

Product Description

ON Semiconductor

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