IRF4905PBF
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Case Connection DRAIN
- Continuous Drain Current (ID) -74A
- Current - Continuous Drain (Id) @ 25°C 74A Tc
- Current Rating -74A
- Drain Current-Max (Abs) (ID) 64A
- Drain to Source Breakdown Voltage -55V
- Drain to Source Voltage (Vdss) 55V
- Drain-source On Resistance-Max 0.02Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Dual Supply Voltage -55V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 96 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 19.8mm
- Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
- JEDEC-95 Code TO-220AB
- JESD-609 Code e3
- Lead Free Contains Lead, Lead Free
- Lead Pitch 2.54mm
- Length 10.5156mm
- Max Junction Temperature (Tj) 175°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Nominal Vgs -4 V
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Active
- Peak Reflow Temperature (Cel) 250
- Power Dissipation 200W
- Power Dissipation-Max 200W Tc
- Published 1997
- Pulsed Drain Current-Max (IDM) 260A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 20m Ω @ 38A, 10V
- REACH SVHC No SVHC
- Recovery Time 130 ns
- Rise Time 99ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
- Termination Through Hole
- Threshold Voltage -4V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 18 ns
- Turn-Off Delay Time 61 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 250μA
- Voltage - Rated DC -55V
- Width 4.69mm
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