SPD02N50C3
Item specifics
- Additional Feature AVALANCHE RATED
- Avalanche Energy Rating (Eas) 50 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 1.8A
- Current - Continuous Drain (Id) @ 25°C 1.8A Tc
- Current Rating 1.8A
- Drain to Source Breakdown Voltage 500V
- Drain-source On Resistance-Max 3Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Element Configuration Single
- Fall Time (Typ) 15 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Halogen Free Not Halogen Free
- Input Capacitance (Ciss) (Max) @ Vds 190pF @ 25V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Contains Lead
- Max Dual Supply Voltage 500V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 3
- Power Dissipation 25W
- Power Dissipation-Max 25W Tc
- Published 2002
- Pulsed Drain Current-Max (IDM) 5.4A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 3 Ω @ 1.1A, 10V
- REACH SVHC No SVHC
- Rise Time 5ns
- RoHS Status RoHS Compliant
- Series CoolMOS™
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Threshold Voltage 3V
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Element Material SILICON
- Turn On Delay Time 10 ns
- Turn-Off Delay Time 70 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.9V @ 80μA
- Voltage - Rated DC 560V
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