SPD02N80C3BTMA1
Item specifics
- Additional Feature AVALANCHE RATED, HIGH VOLTAGE
- Avalanche Energy Rating (Eas) 90 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 2A
- Current - Continuous Drain (Id) @ 25°C 2A Tc
- Drain Current-Max (Abs) (ID) 2A
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Fall Time (Typ) 18 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Max Dual Supply Voltage 800V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Discontinued
- Pbfree Code yes
- Pin Count 4
- Power Dissipation 42W
- Power Dissipation-Max 42W Tc
- Published 2013
- Pulsed Drain Current-Max (IDM) 6A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 2.7 Ω @ 1.2A, 10V
- Rise Time 15ns
- RoHS Status ROHS3 Compliant
- Series CoolMOS™
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Terminal Position SINGLE
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 25 ns
- Turn-Off Delay Time 65 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.9V @ 120μA
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