TK32E12N1,S1X
Item specifics
- Continuous Drain Current (ID) 60A
- Current - Continuous Drain (Id) @ 25°C 60A Tc
- Drain to Source Breakdown Voltage 120V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- Element Configuration Single
- Fall Time (Typ) 14 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 60V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Operating Temperature 150°C TJ
- Package / Case TO-220-3
- Packaging Tube
- Part Status Active
- Power Dissipation 98W
- Power Dissipation-Max 98W Tc
- Published 2014
- Rds On (Max) @ Id, Vgs 13.8m Ω @ 16A, 10V
- Rise Time 14ns
- RoHS Status RoHS Compliant
- Series U-MOSVIII-H
- Turn-Off Delay Time 43 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 4V @ 500μA
Product Description
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