BSZ160N10NS3GATMA1

BSZ160N10NS3GATMA1

Product Code: BSZ160N10NS3GATMA1
Availability: In Stock
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Price: $7.80
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Item specifics

  • Avalanche Energy Rating (Eas) 80 mJ
  • Case Connection DRAIN
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 8A Ta 40A Tc
  • Drain Current-Max (Abs) (ID) 40A
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 0.016Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 6V 10V
  • DS Breakdown Voltage-Min 100V
  • ECCN Code EAR99
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
  • HTS Code 8541.29.00.95
  • Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 50V
  • JESD-30 Code S-PDSO-N5
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Surface Mount
  • Number of Elements 1
  • Number of Terminations 5
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case 8-PowerTDFN
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Pbfree Code no
  • Pin Count 8
  • Power Dissipation-Max 2.1W Ta 63W Tc
  • Published 2011
  • Pulsed Drain Current-Max (IDM) 160A
  • Qualification Status Not Qualified
  • Rds On (Max) @ Id, Vgs 16m Ω @ 20A, 10V
  • Reach Compliance Code not_compliant
  • RoHS Status ROHS3 Compliant
  • Series OptiMOS™
  • Surface Mount YES
  • Terminal Finish Tin (Sn)
  • Terminal Form NO LEAD
  • Terminal Position DUAL
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 3.5V @ 12μA

Product Description

Infineon Technologies

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