SI2301BDS-T1-E3
Item specifics
- Contact Plating Tin
- Continuous Drain Current (ID) -2.2A
- Current - Continuous Drain (Id) @ 25°C 2.2A Ta
- Drain to Source Breakdown Voltage -20V
- Drain to Source Voltage (Vdss) 20V
- Drive Voltage (Max Rds On,Min Rds On) 2.5V 4.5V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 40 ns
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
- Gate to Source Voltage (Vgs) 8V
- Height 1.12mm
- Input Capacitance (Ciss) (Max) @ Vds 375pF @ 6V
- JESD-609 Code e3
- Lead Free Lead Free
- Length 3.04mm
- Max Junction Temperature (Tj) 150°C
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Nominal Vgs -950 mV
- Number of Channels 1
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-236-3, SC-59, SOT-23-3
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code yes
- Peak Reflow Temperature (Cel) 260
- Pin Count 3
- Power Dissipation 700mW
- Power Dissipation-Max 700mW Ta
- Published 2003
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 100m Ω @ 2.8A, 4.5V
- REACH SVHC Unknown
- Resistance 100MOhm
- Rise Time 40ns
- RoHS Status ROHS3 Compliant
- Series TrenchFET®
- Terminal Form GULL WING
- Terminal Position DUAL
- Threshold Voltage -950mV
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Element Material SILICON
- Turn On Delay Time 20 ns
- Turn-Off Delay Time 30 ns
- Vgs (Max) ±8V
- Vgs(th) (Max) @ Id 950mV @ 250μA
- Weight 1.437803g
- Width 1.4mm
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