SPD50P03LGBTMA1
Item specifics
- Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Avalanche Energy Rating (Eas) 256 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C 50A Tc
- Drain Current-Max (Abs) (ID) 50A
- Drain to Source Voltage (Vdss) 30V
- Drain-source On Resistance-Max 0.007Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- DS Breakdown Voltage-Min 30V
- ECCN Code EAR99
- FET Type P-Channel
- Gate Charge (Qg) (Max) @ Vgs 126nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 6880pF @ 25V
- JESD-30 Code R-PSSO-G4
- JESD-609 Code e3
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Terminations 4
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Packaging Tape & Reel (TR)
- Part Status Active
- Pbfree Code no
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 4
- Power Dissipation-Max 150W Tc
- Published 2007
- Pulsed Drain Current-Max (IDM) 200A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 7m Ω @ 50A, 10V
- Reach Compliance Code not_compliant
- RoHS Status ROHS3 Compliant
- Series OptiMOS™
- Surface Mount YES
- Terminal Finish Tin (Sn)
- Terminal Form GULL WING
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Element Material SILICON
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 2V @ 250μA
Product Description
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