AUIRLS3036TRL
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Avalanche Energy Rating (Eas) 290 mJ
- Case Connection DRAIN
- Contact Plating Tin
- Continuous Drain Current (ID) 195A
- Current - Continuous Drain (Id) @ 25°C 195A Tc
- Drain to Source Breakdown Voltage 60V
- Drain-source On Resistance-Max 0.0024Ohm
- Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 110 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
- Gate to Source Voltage (Vgs) 16V
- Height 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds 11210pF @ 50V
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Length 10.67mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 380W
- Power Dissipation-Max 380W Tc
- Published 2008
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 2.4m Ω @ 165A, 10V
- REACH SVHC No SVHC
- Rise Time 220ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Form GULL WING
- Threshold Voltage 1V
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 66 ns
- Turn-Off Delay Time 110 ns
- Vgs (Max) ±16V
- Vgs(th) (Max) @ Id 2.5V @ 250μA
- Width 9.65mm
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