IPI50R399CPXKSA2
Item specifics
- Avalanche Energy Rating (Eas) 215 mJ
- Case Connection DRAIN
- Continuous Drain Current (ID) 9A
- Current - Continuous Drain (Id) @ 25°C 9A Tc
- Drain Current-Max (Abs) (ID) 9A
- Drain to Source Breakdown Voltage 560V
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
- Gate to Source Voltage (Vgs) 20V
- Height 9.45mm
- Input Capacitance (Ciss) (Max) @ Vds 890pF @ 100V
- JESD-609 Code e3
- Length 10.2mm
- Max Dual Supply Voltage 500V
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Through Hole
- Mounting Type Through Hole
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging Tube
- Part Status Not For New Designs
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Power Dissipation 83W
- Power Dissipation-Max 83W Tc
- Published 2008
- Pulsed Drain Current-Max (IDM) 20A
- Rds On (Max) @ Id, Vgs 399m Ω @ 4.9A, 10V
- Rise Time 14ns
- RoHS Status ROHS3 Compliant
- Series CoolMOS™
- Terminal Finish Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 35 ns
- Turn-Off Delay Time 80 ns
- Vgs (Max) ±20V
- Vgs(th) (Max) @ Id 3.5V @ 330μA
- Width 4.5mm
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