APT32F120J
Item specifics
- Additional Feature AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY
- Avalanche Energy Rating (Eas) 2700 mJ
- Case Connection ISOLATED
- Contact Plating Tin
- Continuous Drain Current (ID) 33A
- Current - Continuous Drain (Id) @ 25°C 33A Tc
- Current Rating 32A
- Drain to Source Breakdown Voltage 1.2kV
- Drain to Source Voltage (Vdss) 1200V
- Drain-source On Resistance-Max 0.32Ohm
- Drive Voltage (Max Rds On,Min Rds On) 10V
- ECCN Code EAR99
- Element Configuration Single
- Fall Time (Typ) 90 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 560nC @ 10V
- Gate to Source Voltage (Vgs) 30V
- Height 9.6mm
- Input Capacitance (Ciss) (Max) @ Vds 18200pF @ 25V
- Lead Free Lead Free
- Length 38.2mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Chassis Mount, Screw
- Mounting Type Chassis Mount
- Number of Channels 1
- Number of Elements 1
- Number of Pins 4
- Number of Terminations 4
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case SOT-227-4, miniBLOC
- Packaging Tube
- Part Status Active
- Pbfree Code yes
- Pin Count 4
- Power Dissipation 960W
- Power Dissipation-Max 960W Tc
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 320m Ω @ 25A, 10V
- Rise Time 60ns
- RoHS Status RoHS Compliant
- Series POWER MOS 8™
- Terminal Form UNSPECIFIED
- Terminal Position UPPER
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 100 ns
- Turn-Off Delay Time 315 ns
- Vgs (Max) ±30V
- Vgs(th) (Max) @ Id 5V @ 2.5mA
- Voltage - Rated DC 1.2kV
- Weight 30.000004g
- Width 25.4mm
Product Description
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