RCX080N25

RCX080N25

Product Code: RCX080N25
Availability: In Stock
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Price: $1.25 $5.29 -76%
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Item specifics

  • Avalanche Energy Rating (Eas) 4.66 mJ
  • Case Connection ISOLATED
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Continuous Drain Current (ID) 8A
  • Current - Continuous Drain (Id) @ 25°C 8A Tc
  • Drain Current-Max (Abs) (ID) 8A
  • Drain to Source Breakdown Voltage 250V
  • Drain-source On Resistance-Max 0.6Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • ECCN Code EAR99
  • Fall Time (Typ) 14 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
  • Gate to Source Voltage (Vgs) 30V
  • Input Capacitance (Ciss) (Max) @ Vds 840pF @ 25V
  • JEDEC-95 Code TO-220AB
  • JESD-30 Code R-PSFM-T3
  • Lead Free Lead Free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Through Hole
  • Mounting Type Through Hole
  • Number of Channels 1
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature 150°C TJ
  • Package / Case TO-220-3 Full Pack
  • Packaging Bulk
  • Part Status Active
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Power Dissipation-Max 2.23W Ta 35W Tc
  • Published 2013
  • Pulsed Drain Current-Max (IDM) 32A
  • Rds On (Max) @ Id, Vgs 600m Ω @ 4A, 10V
  • Reach Compliance Code not_compliant
  • Rise Time 28ns
  • RoHS Status ROHS3 Compliant
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 22 ns
  • Turn-Off Delay Time 28 ns
  • Vgs (Max) ±30V
  • Vgs(th) (Max) @ Id 5V @ 1mA

Product Description

ROHM Semiconductor

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