NCV8440STT1G
Item specifics
- Avalanche Energy Rating (Eas) 110 mJ
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) 2.6A
- Current - Continuous Drain (Id) @ 25°C 2.6A Ta
- Drain to Source Voltage (Vdss) 59V
- Drain-source On Resistance-Max 0.95Ohm
- Drive Voltage (Max Rds On,Min Rds On) 3.5V 10V
- DS Breakdown Voltage-Min 52V
- ECCN Code EAR99
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds 155pF @ 35V
- JESD-30 Code R-PDSO-G3
- JESD-609 Code e3
- Lead Free Lead Free
- Lifecycle Status CONSULT SALES OFFICE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 4
- Number of Terminations 3
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~150°C TJ
- Package / Case TO-261-4, TO-261AA
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Pbfree Code yes
- Peak Reflow Temperature (Cel) NOT SPECIFIED
- Pin Count 4
- Power Dissipation-Max 1.69W Ta
- Published 2005
- Pulsed Drain Current-Max (IDM) 10A
- Qualification Status Not Qualified
- Rds On (Max) @ Id, Vgs 110m Ω @ 2.6A, 10V
- RoHS Status RoHS Compliant
- Terminal Finish Matte Tin (Sn)
- Terminal Form GULL WING
- Terminal Position DUAL
- Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Vgs (Max) ±15V
- Vgs(th) (Max) @ Id 1.9V @ 100μA
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