SI8802DB-T2-E1

SI8802DB-T2-E1

Product Code: SI8802DB-T2-E1
Availability: In Stock
Viewed 3 times
Price: $0.21 $3.97 -95%
0 sold. Only 31226 remain

Item specifics

  • Contact Plating Tin
  • Continuous Drain Current (ID) 3.5A
  • Drain to Source Breakdown Voltage 8V
  • Drive Voltage (Max Rds On,Min Rds On) 1.2V 4.5V
  • ECCN Code EAR99
  • Element Configuration Single
  • Fall Time (Typ) 7 ns
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
  • Gate to Source Voltage (Vgs) 5V
  • JESD-609 Code e3
  • Lead Free Lead Free
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mount Surface Mount
  • Mounting Type Surface Mount
  • Nominal Vgs 350 mV
  • Number of Channels 1
  • Number of Elements 1
  • Number of Pins 4
  • Number of Terminations 4
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~150°C TJ
  • Package / Case 4-XFBGA
  • Packaging Digi-Reel®
  • Part Status Active
  • Pin Count 4
  • Power Dissipation 500mW
  • Power Dissipation-Max 500mW Ta
  • Published 2015
  • Radiation Hardening No
  • Rds On (Max) @ Id, Vgs 54m Ω @ 1A, 4.5V
  • REACH SVHC Unknown
  • Resistance 54mOhm
  • Rise Time 15ns
  • RoHS Status ROHS3 Compliant
  • Series TrenchFET®
  • Terminal Form BALL
  • Terminal Position BOTTOM
  • Transistor Application SWITCHING
  • Transistor Element Material SILICON
  • Turn On Delay Time 5 ns
  • Turn-Off Delay Time 22 ns
  • Vgs (Max) ±5V
  • Vgs(th) (Max) @ Id 700mV @ 250μA

Product Description

Vishay Siliconix

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