AUIRLR3410TR
Item specifics
- Additional Feature AVALANCHE RATED, HIGH RELIABILITY
- Case Connection DRAIN
- Configuration SINGLE WITH BUILT-IN DIODE
- Contact Plating Tin
- Continuous Drain Current (ID) 17A
- Current - Continuous Drain (Id) @ 25°C 17A Tc
- Drain to Source Breakdown Voltage 100V
- Drive Voltage (Max Rds On,Min Rds On) 4V 10V
- ECCN Code EAR99
- Fall Time (Typ) 26 ns
- FET Type N-Channel
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 5V
- Gate to Source Voltage (Vgs) 16V
- Height 2.3876mm
- Input Capacitance (Ciss) (Max) @ Vds 800pF @ 25V
- JEDEC-95 Code TO-252AA
- JESD-30 Code R-PSSO-G2
- JESD-609 Code e3
- Lead Free Lead Free
- Length 6.7056mm
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Mount Surface Mount
- Mounting Type Surface Mount
- Number of Elements 1
- Number of Pins 3
- Number of Terminations 2
- Operating Mode ENHANCEMENT MODE
- Operating Temperature -55°C~175°C TJ
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging Tape & Reel (TR)
- Part Status Active
- Peak Reflow Temperature (Cel) 260
- Power Dissipation 79W
- Power Dissipation-Max 79W Tc
- Published 2010
- Pulsed Drain Current-Max (IDM) 60A
- Radiation Hardening No
- Rds On (Max) @ Id, Vgs 105m Ω @ 10A, 10V
- Resistance 105MOhm
- Rise Time 53ns
- RoHS Status ROHS3 Compliant
- Series HEXFET®
- Terminal Form GULL WING
- Terminal Position SINGLE
- Time@Peak Reflow Temperature-Max (s) 30
- Transistor Application SWITCHING
- Transistor Element Material SILICON
- Turn On Delay Time 7.2 ns
- Turn-Off Delay Time 30 ns
- Vgs (Max) ±16V
- Vgs(th) (Max) @ Id 2V @ 250μA
- Width 6.223mm
Product Description
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