SPI21N10

SPI21N10

Product Code: SPI21N10
Availability: In Stock
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Price: $9.84
0 sold. Only 8558 remain

Item specifics

  • Additional Feature AVALANCHE RATED
  • Avalanche Energy Rating (Eas) 130 mJ
  • Configuration SINGLE WITH BUILT-IN DIODE
  • Current - Continuous Drain (Id) @ 25°C 21A Tc
  • Drain Current-Max (Abs) (ID) 21A
  • Drain to Source Voltage (Vdss) 100V
  • Drain-source On Resistance-Max 0.08Ohm
  • Drive Voltage (Max Rds On,Min Rds On) 10V
  • DS Breakdown Voltage-Min 100V
  • FET Type N-Channel
  • Gate Charge (Qg) (Max) @ Vgs 38.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 865pF @ 25V
  • JESD-30 Code R-PSIP-T3
  • JESD-609 Code e3
  • Moisture Sensitivity Level (MSL) 1 (Unlimited)
  • Mounting Type Through Hole
  • Number of Elements 1
  • Number of Terminations 3
  • Operating Mode ENHANCEMENT MODE
  • Operating Temperature -55°C~175°C TJ
  • Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
  • Packaging Tube
  • Part Status Obsolete
  • Pbfree Code yes
  • Peak Reflow Temperature (Cel) NOT SPECIFIED
  • Pin Count 3
  • Power Dissipation-Max 90W Tc
  • Pulsed Drain Current-Max (IDM) 84A
  • Qualification Status COMMERCIAL
  • Rds On (Max) @ Id, Vgs 80m Ω @ 15A, 10V
  • Reach Compliance Code unknown
  • RoHS Status ROHS3 Compliant
  • Series SIPMOS®
  • Surface Mount NO
  • Terminal Finish MATTE TIN
  • Terminal Position SINGLE
  • Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
  • Transistor Element Material SILICON
  • Vgs (Max) ±20V
  • Vgs(th) (Max) @ Id 4V @ 44μA

Product Description

Rochester Electronics, LLC

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